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2SC5757
Silicon NPN Epitaxial VHF/UHF wide band amplifier
REJ03G0753-0500 (Previous ADE-208-1396D) Rev.5.00 Aug.10.2005
Features
Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)
Outline
RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R )
3
1 2
1. Emitter 2. Base 3. Collector
Note: Marking is "WE-". *MFPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 10 3.5 1.5 80 80 150 -55 to +150 Unit V V V mA mW C C
Rev.5.00 Aug 10, 2005 page 1 of 8
2SC5757
Electrical Characteristics
(Ta = 25C)
Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG NF Min 10 80 0.9 4.5 8 Typ 100 1.2 6.5 11 1.1 Max 600 200 100 130 1.5 2.0 Unit V nA nA nA pF GHz dB dB Test conditions IC = 10 A, IE = 0 VCB = 10 V, IE = 0 VCE = 3.5 V, RBE = VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz
Rev.5.00 Aug 10, 2005 page 2 of 8
2SC5757
Main Characteristics
Collector Power Dissipation Curve
Pc (mW)
100
Typical Output Characteristics
500 A A 50 450
400 A
350
A
IC (mA)
80
40
300
A
A
Collector Power Dissipation
250
60
30
Collector Current
200
A
40
20
15 0 A
1 0 0 A
10
20
IB = 50 A
0
50
100
150
200
0
0.5
1
1.5
2
2.5
3
3.5
Ambient Temperature
Ta (C)
Collector to Emitter Voltage
VCE (V)
Typical Transfer Characteristics
50 200
DC Current Transfer Ratio vs. Collector Current
hFE
VCE = 1 V
VCE = 1 V
IC (mA)
30
DC Current Transfer Ratio
0.2 0.4 0.6 0.8 1
40
Collector Current
100
20
10
0 0 1 2 5 10 20 50 100
Base to Emitter Voltage
VBE (V)
Collector Current
IC (mA)
Collector Output Capacitance vs. Collector to Base Voltage
Collector Output Capacitance Cob (pF) fT (GHz)
2.0 IE = 0 f = 1 MHz 20
Gain Bandwidth Product vs. Collector Current
VCE = 1 V f = 2 GHz 16
1.6
1.2
Gain Bandwidth Product
0.4 0.8 1.2 1.6 2.0
12
0.8
8
0.4
4 0 1 2 5 10 20 50 100
0
Collector to Base Voltage VCB (V)
Collector Current
IC (mA)
Rev.5.00 Aug 10, 2005 page 3 of 8
2SC5757
S21 Parameter vs. Collector Current
20 20 VCE = 1 V f = 2 GHz VCE = 1 V f = 900 MHz
Power Gain vs. Collector Current
|S21|2 (dB)
S21 Parameter
8
Power Gain
1 2 5 10 20 100
PG
12
(dB)
16
16
12
8
4
4 0
0 50
1
2
5
10
20
50
100
Collector Current
IC (mA)
Collector Current
IC (mA)
Noise Figure vs. Collector Current
5 VCE = 1V f = 900 MHz 4
NF (dB) Noise Figure
3
2
1 0 1 2 5 10 20 50 100
Collector Current
IC (mA)
Rev.5.00 Aug 10, 2005 page 4 of 8
2SC5757
S11 Parameter vs. Frequency
.8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1
1.5 2 150 30
1
1.5 2
S21 Parameter vs. Frequency Scale: 8 / div. 90
120 60
3 45
10
180
0
-10 -.2 -5 -4 -3 -.4 -.6 -.8 -1.5 -2
-120
-150
-30
-60 -90
-1
Condition: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz Step) ( IC = 5 mA) ( IC = 20 mA)
Condition: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz Step) ( IC = 5 mA) ( IC = 20 mA)
S12 Parameter vs. Frequency Scale: 0.06 / div. 90
120 60
.4
S22 Parameter vs. Frequency
.8 .6 1 1.5 2 3
150
30
.2
4 5 10
180
0
0
.2
.4
.6 .8 1
1.5 2
3 45
10
-10 -.2 -5 -4 -3 -.4 -120 -2 -.6 -.8 -1 -1.5
-150
-30
-60 -90
Condition: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz Step) ( IC = 5 mA) ( IC = 20 mA)
Condition: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz Step) ( IC = 5 mA) ( IC = 20 mA)
Rev.5.00 Aug 10, 2005 page 5 of 8
2SC5757
Sparameter
(VCE = 1V, IC = 5mA, Zo = 50)
S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.797 0.695 0.638 0.594 0.571 0.558 0.548 0.545 0.539 0.541 0.542 0.543 0.546 0.546 0.552 0.558 0.558 0.570 0.577 0.578 ANG -40.0 -75.2 -100.7 -117.6 -130.8 -140.3 -148.5 -154.4 -160.1 -164.6 -169.1 -171.9 -175.6 -178.4 179.4 176.4 174.2 171.7 169.6 167.8 MAG 14.26 11.44 9.03 7.23 6.00 5.13 4.43 3.93 3.52 3.20 2.93 2.71 2.53 2.36 2.23 2.10 2.00 1.90 1.81 1.75 S21 ANG 154.3 133.4 119.6 110.7 103.8 98.8 94.6 90.9 88.0 85.0 82.5 80.2 77.9 75.6 73.8 71.6 70.1 68.5 66.6 65.3 MAG 0.048 0.081 0.099 0.109 0.116 0.122 0.128 0.134 0.139 0.145 0.150 0.156 0.163 0.169 0.176 0.183 0.191 0.198 0.206 0.214 S12 ANG 69.8 54.5 46.6 42.7 41.1 41.1 41.2 42.6 43.6 45.0 46.3 48.1 49.1 50.5 51.8 52.8 54.0 55.0 56.1 56.7 MAG 0.881 0.709 0.559 0.457 0.388 0.336 0.300 0.274 0.254 0.238 0.227 0.221 0.213 0.209 0.207 0.205 0.206 0.207 0.210 0.212 S22 ANG -28.5 -52.2 -69.4 -81.5 -91.3 -99.7 -107.0 -113.5 -120.0 -125.7 -130.8 -135.9 -141.1 -144.8 -149.5 -153.0 -156.9 -160.7 -163.9 -167.7
Rev.5.00 Aug 10, 2005 page 6 of 8
2SC5757 (VCE = 1V, IC = 20mA, Zo = 50)
S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.512 0.523 0.531 0.533 0.540 0.539 0.541 0.543 0.545 0.547 0.550 0.552 0.557 0.566 0.570 0.569 0.570 0.580 0.588 0.587 ANG -94.1 -134.9 -151.8 -161.4 -168.0 -172.3 -176.7 -179.7 177.0 174.3 171.8 170.0 167.3 165.5 163.7 162.0 160.2 158.3 157.6 154.9 MAG 30.18 18.31 12.60 9.53 7.67 6.43 5.49 4.83 4.30 3.91 3.57 3.29 3.05 2.87 2.68 2.54 2.41 2.29 2.19 2.12 S21 ANG 133.2 112.6 102.9 97.8 93.7 90.7 88.2 86.0 84.3 82.1 80.6 79.0 77.5 75.8 74.4 73.2 71.4 70.8 69.2 68.0 MAG 0.031 0.044 0.054 0.065 0.076 0.088 0.100 0.111 0.123 0.135 0.148 0.159 0.172 0.184 0.197 0.208 0.220 0.233 0.244 0.256 S12 ANG 60.2 54.5 57.1 60.5 63.2 65.5 66.6 67.8 68.4 69.1 69.5 69.9 69.8 70.0 70.0 69.9 69.5 69.2 69.4 69.1 MAG 0.643 0.459 0.386 0.355 0.341 0.333 0.330 0.328 0.328 0.329 0.329 0.332 0.334 0.336 0.339 0.341 0.345 0.350 0.355 0.360 S22 ANG -66.8 -104.5 -126.5 -140.6 -150.2 -157.8 -163.7 -168.7 -172.9 -176.7 -180.0 176.9 174.2 171.5 169.2 167.1 164.7 162.8 161.0 158.8
Rev.5.00 Aug 10, 2005 page 7 of 8
2SC5757
Package Dimensions
JEITA Package Code SC-89 Modified RENESAS Code PUSF0003ZA-A Package Name MFPAK / MFPAKV MASS[Typ.] 0.0016g
D e
A c
LP
E
HE
L A A b xM S A
Reference Symbol Dimension in Millimeters
e
A2
A
e1 A1 b b1 c b2 A-A Section Pattern of terminal position areas c1 S I1
A A1 A2 b b1 c c1 D E e HE L LP x b2 e1 I1
Min 0.55 0 0.55 0.15 0.1 1.35 0.7 1.15 0.1 0.15
Nom
0.22 0.2 0.13 0.11 1.4 0.8 0.45 1.2 0.2
Max 0.6 0.01 0.59 0.3 0.15 1.45 0.9 1.25 0.3 0.45 0.05 0.35 0.5
0.75
Ordering Information
Part Name 2SC5757WE-TR-E Quantity 9000 Shipping Container 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.5.00 Aug 10, 2005 page 8 of 8
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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